| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device, including: a P-type substrate; an N-type region, contacting with the P-type substrate; a N+-type doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting with the N-type region; and a N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region. |
| 申请公布号 |
US2015364471(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201514680482 |
申请日期 |
2015.04.07 |
| 申请人 |
Nuvoton Technology Corporation |
发明人 |
CHANG Chia-Wei;CHEN Po-An |
| 分类号 |
H01L27/092;H01L29/08;H01L29/06;H01L29/78;H01L29/10 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a P-type substrate; an N-type region, contacting the P-type substrate; an N+ doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting the N-type region; and an N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region. |
| 地址 |
Hsinchu TW |
