发明名称 |
Methods Of Manufacturing Silicon Blades For Shaving Razors |
摘要 |
Methods are provided for the manufacture of razor blades from silicon material. In some implementations, the method includes aligning a mono-crystalline silicon wafer comprising a {100} surface at an angle where {111} planes intersect the {100} surface parallel and perpendicular to the wafer; etching the mono-crystalline silicon wafer to expose an {111} plane and a second plane to provide a blade edge having between about a 20 degree included blade angle and about a 35 degree included blade angle; applying a hard coating on the blade edge; providing a radius of curvature of the blade edge between about 20 nanometers and about 100 nanometers after deposition of the hard coating; applying a soft coating on the blade edge; and removing the razor blade from the mono-crystalline silicon wafer. |
申请公布号 |
US2015360376(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201414306702 |
申请日期 |
2014.06.17 |
申请人 |
The Gillette Company |
发明人 |
Simms Graham John;Leussink Peter Johannus;Sonnenberg Neville |
分类号 |
B26B21/40;B26B21/56;B26B21/60 |
主分类号 |
B26B21/40 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for manufacturing at least one razor blade comprising:
aligning a mono-crystalline silicon wafer comprising a {100} surface at an angle where {111} planes intersect the {100} surface parallel and perpendicular to the wafer; etching the mono-crystalline silicon wafer to expose an {111} plane and a second plane to provide at least one blade edge having between about a 19.5 degree included blade angle and about a 35.3 degree included blade angle; applying at least one inner layer on the at least one blade edge; providing a radius of curvature of the at least one blade edge between about 20 nanometers and about 100 nanometers after deposition of the at least one inner layer; applying at least one outer layer on the at least one blade edge; and removing the at least one razor blade from the mono-crystalline silicon wafer. |
地址 |
Boston MA US |