发明名称 Methods Of Manufacturing Silicon Blades For Shaving Razors
摘要 Methods are provided for the manufacture of razor blades from silicon material. In some implementations, the method includes aligning a mono-crystalline silicon wafer comprising a {100} surface at an angle where {111} planes intersect the {100} surface parallel and perpendicular to the wafer; etching the mono-crystalline silicon wafer to expose an {111} plane and a second plane to provide a blade edge having between about a 20 degree included blade angle and about a 35 degree included blade angle; applying a hard coating on the blade edge; providing a radius of curvature of the blade edge between about 20 nanometers and about 100 nanometers after deposition of the hard coating; applying a soft coating on the blade edge; and removing the razor blade from the mono-crystalline silicon wafer.
申请公布号 US2015360376(A1) 申请公布日期 2015.12.17
申请号 US201414306702 申请日期 2014.06.17
申请人 The Gillette Company 发明人 Simms Graham John;Leussink Peter Johannus;Sonnenberg Neville
分类号 B26B21/40;B26B21/56;B26B21/60 主分类号 B26B21/40
代理机构 代理人
主权项 1. A method for manufacturing at least one razor blade comprising: aligning a mono-crystalline silicon wafer comprising a {100} surface at an angle where {111} planes intersect the {100} surface parallel and perpendicular to the wafer; etching the mono-crystalline silicon wafer to expose an {111} plane and a second plane to provide at least one blade edge having between about a 19.5 degree included blade angle and about a 35.3 degree included blade angle; applying at least one inner layer on the at least one blade edge; providing a radius of curvature of the at least one blade edge between about 20 nanometers and about 100 nanometers after deposition of the at least one inner layer; applying at least one outer layer on the at least one blade edge; and removing the at least one razor blade from the mono-crystalline silicon wafer.
地址 Boston MA US