发明名称 STRUCTURE OF A READOUT CIRCUIT WITH CHARGE INJECTION
摘要 The invention concerns a structure of a readout circuit, formed on a semiconductor substrate (1) of a first type, and intended to measure the charges received from an external charge source (2) external to the substrate (1) according to successive charge integration cycles, said structure comprising: an injection diode configured to inject, into the substrate (1), the charges received from the external charge source (2), a collector diode suitable for collecting, in the substrate (1), at least a portion of the charges injected by the injection diode and for accumulating said charges during an integration cycle, a charge recovery structure (7), configured to recover the charges accumulated in said collector diode, means for initialising the charge recovery structure (7) at the end of each integration cycle, by restoring the electrical potential of said charge recovery structure to an initial potential.
申请公布号 WO2015189359(A1) 申请公布日期 2015.12.17
申请号 WO2015EP63112 申请日期 2015.06.12
申请人 NEW IMAGING TECHNOLOGIES 发明人 NI, YANG
分类号 H01L27/146 主分类号 H01L27/146
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