发明名称 SINGLE CRYSTALLINE METAL FILMS CONTAINING HYDROGEN ATOM OR HYDROGEN ION AND MANUFACTURING METHOD THEREOF
摘要 The present invention relates to a single crystalline metal film, containing a hydrogen atom or a hydrogen ion oriented on a substrate or only on a crystal face (111) without a subject; and a manufacturing method thereof. According to the present invention, the single crystalline metal film, containing the hydrogen ion oriented on only the crystal face (111), is able to be formed in various shapes such as a foil, a plane, a block, or a tube only with thermal treatment in a hydrogen atmosphere from a metal precursor having a preferred orientation of the crystal face and crystallinity without a high-priced substrate. As conductivity is improved by containing the hydrogen ion or the hydrogen atom, the present invention is able to be applied to a display operation chip, a semiconductor device, a lithium secondary battery, a fuel battery, a solar battery, or a material for a gas sensor.
申请公布号 KR20150141139(A) 申请公布日期 2015.12.17
申请号 KR20150077600 申请日期 2015.06.01
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 PARK, HO BUM;LEE, MIN YONG;PARK, SUN MI;YOON, HEE WOOK;KIM, HAN SU
分类号 C23C26/00;C23C30/00 主分类号 C23C26/00
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