发明名称 |
CRYSTALLINE MULTIPLE-NANOSHEET STRAINED CHANNEL FETS AND METHODS OF FABRICATING THE SAME |
摘要 |
A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer that is lattice mismatched with the channel region, and a crystalline gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed. |
申请公布号 |
WO2015190852(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
WO2015KR05902 |
申请日期 |
2015.06.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OBRADOVIC, BORNA J;BOWEN, ROBERT C.;RODDER, MARK S |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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