| 摘要 |
An etching apparatus using inductively coupled plasma (ICP) includes a chuck, an antenna, and a dielectric window. The substrate is mounted on the chuck. The antenna is disposed on an upper part of the chuck and forms an induced electromagnetic field between the chuck and the antenna. The dielectric window is disposed between the antenna and the chuck and delivers the induced electromagnetic field to the substrate. The dielectric window has: at least two receiving spaces into which etching gases, generating plasma by the induced electromagnetic field, are introduced; and a plurality of spray holes connected to the receiving spaces individually and spraying the etching gases toward the substrate. Therefore, a flow rate of the etching gases supplied to the substrate can be selectively adjusted. |
