SEMICONDUCTOR DEVICES WITH SEMICONDUCTOR BODIES HAVING INTERLEAVED HORIZONTAL PORTIONS AND METHOD OF FORMING THE DEVICES

摘要

Disclosed are semiconductor devices (e.g., diodes, such as PN junction diodes and PIN junction diodes, and capacitors) that have semiconductor bodies with interleaved horizontal portions. In the case of a diode, the semiconductor bodies can have different type conductivities and, optionally, can be separated by an intrinsic semiconductor layer. In the case of a capacitor, the semiconductor bodies can have the same or different type conductivities and can be separated by a dielectric layer. In any case, due to the interleaved horizontal portions, the semiconductor devices each have a relatively large active device region within a relatively small area on an integrated circuit chip. Also disclosed herein are methods of forming such semiconductor devices.

主权项

1. A semiconductor device comprising:
a first semiconductor body comprising:
a first vertical portion comprising a dopant implant region extending vertically through a stack of alternating first semiconductor layers and second semiconductor layers; and,multiple first horizontal portions comprising sections of said first semiconductor layers extending laterally from said first vertical portion and beyond said second semiconductor layers; and a second semiconductor body adjacent to said first semiconductor body, said second semiconductor body comprising an additional semiconductor layer comprising:
a second vertical portion; and,multiple second horizontal portions continuous with and extending laterally from said second vertical portion, said second horizontal portions being interleaved with said first horizontal portions.