NANOSHEET FETS WITH STACKED NANOSHEETS HAVING SMALLER HORIZONTAL SPACING THAN VERTICAL SPACING FOR LARGE EFFECTIVE WIDTH

摘要

A device including a stacked nanosheet field effect transistor (FET) may include a substrate, a first channel pattern on the substrate, a second channel pattern on the first channel pattern, a gate that is configured to surround portions of the first channel pattern and portions of the second channel pattern, and source/drain regions on opposing ends of the first channel pattern and second channel pattern. The first and second channel patterns may each include a respective plurality of nanosheets arranged in a respective horizontal plane that is parallel to a surface of the substrate. The nanosheets may be spaced apart from each other at a horizontal spacing distance between adjacent ones of the nanosheets. The second channel pattern may be spaced apart from the first channel pattern at a vertical spacing distance from the first channel pattern to the second channel pattern that is greater than the horizontal spacing distance.

主权项

1. A device comprising a field effect transistor (FET), the FET comprising:
a substrate; a first channel pattern on the substrate, the first channel pattern comprising a first plurality of nanosheets arranged in a first horizontal plane that is parallel to a surface of the substrate, the first plurality of nanosheets spaced apart from each other in a first direction that is parallel to the surface of the substrate at a horizontal spacing distance between adjacent ones of the first plurality of nanosheets; a second channel pattern on the first channel pattern and spaced apart from the first channel pattern in a second direction that is perpendicular to the surface of the substrate at a vertical spacing distance from the first channel pattern to the second channel pattern that is greater than the horizontal spacing distance, the second channel pattern comprising a second plurality of nanosheets arranged in a second horizontal plane that is parallel to the surface of the substrate, the second plurality of nanosheets spaced apart from each other in the first direction at the horizontal spacing distance between adjacent ones of the second plurality of nanosheets; a gate that is configured to surround portions of the first channel pattern and portions of the second channel pattern; and source/drain regions on opposing ends of the first channel pattern and second channel pattern, ones of the source/drain regions connected to a respective end of the first channel pattern and a respective corresponding end of the second channel pattern.