Semiconductor Device Die Singulation by Discontinuous Laser Scribe and Break

摘要

A method for singulating a semiconductor device dies from a wafer, and a singulated semiconductor device die is disclosed. In one embodiment, the method includes forming a plurality of recesses in a surface of the wafer along the edges of the semiconductor device dies to be singulated, each of the recesses having a tapered inner surface. The method further includes applying pressure to an opposite surface of the wafer along the edges of the semiconductor device dies, separating the edges of the semiconductor device dies from the wafer. In one embodiment, the recesses are formed by a pulsed laser. In one embodiment, the pressure is applied by a wafer breaking machine.

主权项

1. A method of singulating a semiconductor device die from a wafer, the method comprising:
forming a plurality of recesses in a surface of the wafer in a dicing street direction along the edges of the semiconductor device die to be singulated, each of the plurality of recesses being spaced apart from an adjacent recess in the range of 1.5 μm to 4 μm and having a tapered inner surface; and applying pressure to an opposite surface of the wafer along the edges of the semiconductor device die, separating the edges of the semiconductor device die from the wafer.