| 摘要 |
The present invention relates to a semiconductor integrated circuit device having a reservoir capacitor, and to a manufacturing method thereof. The semiconductor integrated circuit device having a reservoir capacitor can be manufactured by the following steps: forming a first insulating layer on a semiconductor substrate including a first region and a second region; forming a second insulating layer on an upper portion of a first conductive layer after forming the first conductive layer on an upper portion of the first insulating layer; forming a second conductive layer on an upper portion of the first conductive layer and the second insulating layer after patterning the second insulating layer such that the second insulating layer remains on a part of the first region; etching the second conductive layer to expose a part of a surface of the first conductive layer in the first region; and forming a reservoir capacitor in the first region by etching the second conductive layer and the first conductive layer, and forming a gate in the second region. |
