FACET-SELECTIVE GROWTH OF NANOSCALE WIRES

摘要

Nanoscale wires, and to systems and methods of producing nanoscale wires comprising facet-specific deposition on semiconductor surfaces. A first surface of a nanoscale wire, or a semiconductor, is preferentially oxidized relative to a second surface, and material is preferentially deposited on the second surface relative to the first surface. For example, the nanoscale wire or semiconductor may be a silicon nanowire that is initially exposed to an etchant to remove silicon oxide, then exposed to an oxidant under conditions such that one facet or surface (e.g., a [ 113 ] facet) is oxidized more quickly than another facet or surface (e.g., a [ 111 ] facet). Material may then be deposited or immobilized on the less-oxidized facet relative to the more-oxidized facet. Articles are made thereby, wherein devices containing such nanoscale wires or semiconductors, kits involving such nanoscale wires or semiconductors, semiconductor surfaces, or the like.