| 摘要 |
The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode. According to the present invention, the diameter of the gallium arsenide semiconductor nanowire can be adjusted through control of the mesh size of the metal thin film, and the length of the nanowire is not only freely adjusted through control of the etching time, the applied voltage, and the applied current, but the same can also be applied to manufacture of a different III-V semiconductor nanowire array. |
