| 摘要 |
PROBLEM TO BE SOLVED: To reduce a peak operating electric field in a HEMT.SOLUTION: A HEMT 10 includes a plurality of active semiconductor layers (a nucleation layer 14, a buffer layer 16, a barrier layer 18) formed on a substrate 12. A source electrode 20, a drain electrode 22 and a gate 24 are formed in electrical contact with the plurality of active layers. A spacer layer 26 is formed on at least a part of a surface of the plurality of active layers, and covers the gate 24. A field plate 30 is formed on the spacer layer 26 and electrically connected to the source electrode 20. |
