| 摘要 |
PROBLEM TO BE SOLVED: To perform removal processing for a semiconductor base material with a high aspect ratio by laser processing.SOLUTION: In one embodiment, a removal processing device 1000 is provided, which includes a light source 100 for emitting a pulse of a laser beam, a conversion optical system 200, and a positioning device 300 for performing positioning. The light source 100 emits a laser pulse of a wavelength that can reach the inside of a workpiece W which is a semiconductor base material. The conversion optical system 200 converts the laser beam so as to be a Bessel beam VB with a peak of optical intensity in a peak range which is a range along a beam axis. Thereby, a Bessel beam pulse which is a pulse of the Bessel beam is formed. The positioning device 300 performs positioning so that the peak range of the Bessel beam pulse overlaps with a part or the whole of a removal target path positioned inside the workpiece. |
