发明名称 Structure and Method for Integrated Circuit
摘要 The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.
申请公布号 US2015364601(A1) 申请公布日期 2015.12.17
申请号 US201414305416 申请日期 2014.06.16
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Kuang Shin-Jiun;Yu Tsung-Hsing;Sheu Yi-Ming
分类号 H01L29/78;H01L29/08;H01L21/02;H01L21/8238;H01L29/161;H01L29/26;H01L27/092;H01L29/66 主分类号 H01L29/78
代理机构 代理人
主权项 1. An integrated circuit comprising: a gate stack disposed over a surface of a substrate; and a spacer disposed along a sidewall of the gate stack, the spacer having a tapered edge that faces the surface while tapering toward the gate stack, wherein the tapered edge has an angle with respect to the surface of the substrate.
地址 Hsin-Chu TW