发明名称 |
Structure and Method for Integrated Circuit |
摘要 |
The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate. |
申请公布号 |
US2015364601(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201414305416 |
申请日期 |
2014.06.16 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kuang Shin-Jiun;Yu Tsung-Hsing;Sheu Yi-Ming |
分类号 |
H01L29/78;H01L29/08;H01L21/02;H01L21/8238;H01L29/161;H01L29/26;H01L27/092;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. An integrated circuit comprising:
a gate stack disposed over a surface of a substrate; and a spacer disposed along a sidewall of the gate stack, the spacer having a tapered edge that faces the surface while tapering toward the gate stack, wherein the tapered edge has an angle with respect to the surface of the substrate. |
地址 |
Hsin-Chu TW |