SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask on a substrate; forming an insulating layer including tonen silazane (TOSZ) on the substrate to cover the dummy gate structure; planarizing the insulating layer until a top surface of the gate mask is exposed to form an insulating layer pattern; removing the exposed gate mask, the dummy gate electrode and the dummy gate insulation layer pattern to form an opening exposing a surface of the substrate, the dummy gate insulation layer pattern being removed using an etchant including hydrogen fluoride (HF) with the insulating layer pattern substantially remaining; and forming a gate structure to fill the opening.