| 发明名称 |
SILICON NANOWIRE FORMATION IN REPLACEMENT METAL GATE PROCESS |
| 摘要 |
Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate, forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure, and performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer, thereby defining a nanowire structure from the fin structure |
| 申请公布号 |
US2015364543(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201414301587 |
申请日期 |
2014.06.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Chen Chia-Yu;Liu Zuoguang;Yamashita Tenko |
| 分类号 |
H01L29/06;H01L21/3105;H01L21/02;H01L29/49;H01L21/28;H01L21/306;H01L29/78;H01L29/66;H01L21/3065 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a fin structure in a substrate; forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure; and defining a nanowire structure from the fin structure by performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer. |
| 地址 |
Armonk NY US |
