发明名称 ACTIVE PIXEL SENSOR HAVING A RAISED SOURCE/DRAIN
摘要 An integrated circuit having an array of APS cells. Each cell in the array has at least one transistor source or drain region that is raised relative to a channel region formed in a semiconductor substrate. The raised source or drain region includes doped polysilicon deposited on the surface of the semiconductor body and a region of the bodyextending to the channel region that has been doped to an opposite doping type from that of the channel region by diffusion of dopants from the deposited polysilicon.
申请公布号 US2015364519(A1) 申请公布日期 2015.12.17
申请号 US201514833405 申请日期 2015.08.24
申请人 Taiwan Semiconductor Manufacturing Co. Ltd. 发明人 Sze Jhy-Jyi
分类号 H01L27/146;H01L29/417;H01L29/08 主分类号 H01L27/146
代理机构 代理人
主权项 1. A device, comprising: a gate stack comprising a dielectric layer and a conductive layer positioned over a semiconductor body; a raised source or drain region having a sidewall in contact with the dielectric layer, wherein the raised source or drain region is doped with an opposite doping type of the semiconductor body; and a sidewall spacer located vertically over the dielectric layer and laterally between the gate stack and the raised source or drain region.
地址 Hsin-Chu TW