发明名称 |
SINGLE-CHIP FIELD EFFECT TRANSISTOR (FET) SWITCH WITH SILICON GERMANIUM (SiGe) POWER AMPLIFIER AND METHODS OF FORMING |
摘要 |
Various embodiments include field effect transistors (FETs) and related integrated circuit (IC) layouts. One FET includes: a silicon substrate including a set of trenches; a first oxide abutting the silicon substrate; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer, wherein the silicon layer includes a plurality of salicide regions; a gate structure overlying the second oxide between adjacent salicide regions; and a first contact contacting the gate structure; a second contact contacting one of the salicide regions; a third oxide partially filling the set of trenches and extending above the silicon layer overlying the SiGe layer; and an air gap in each of the set of trenches, the air gap surrounded by the third oxide. |
申请公布号 |
US2015364492(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201514834696 |
申请日期 |
2015.08.25 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Peng;Dunn James S.;Gross Blaine J.;Liu Qizhi;Slinkman James A. |
分类号 |
H01L27/12;H01L29/45;H01L29/165;H01L29/78;H01L27/02;H01L29/06 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A field effect transistor (FET) comprising:
a silicon substrate including a set of trenches; a first oxide abutting the silicon substrate; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer, wherein the silicon layer includes a plurality of salicide regions; a gate structure overlying the second oxide between adjacent salicide regions; and a first contact contacting the gate structure; a second contact contacting one of the salicide regions; a third oxide partially filling the set of trenches and extending above the silicon layer overlying the SiGe layer; and an air gap in each of the set of trenches, the air gap surrounded by the third oxide. |
地址 |
Armonk NY US |