| 发明名称 |
METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE |
| 摘要 |
The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a nitrogen silicon compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated. |
| 申请公布号 |
US2015364397(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201314412445 |
申请日期 |
2013.07.25 |
| 申请人 |
CSMC Technologies FAB2 CO., Ltd. |
发明人 |
WANG ZHEWEI;CHEN XUELEI;LIU BINBIN;GAO LIUCHUN;ZHAO HONGXING;HUANG GUOMIN;JIANG LONG;JIAO JIBIN |
| 分类号 |
H01L23/31;H01L29/78;H01L29/66;H01L23/29;H01L21/02 |
主分类号 |
H01L23/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a passivation layer of a MOS device, comprising:
forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a nitrogen silicon compound on the PSG. |
| 地址 |
Wuxi New District CN |
