发明名称 |
SEMICONDUCTOR APPARATUS HAVING REPAIRABLE THROUGH-ELECTRODE |
摘要 |
A semiconductor apparatus having a repairable through-electrode is provided. The semiconductor apparatus having a repairable through-electrode comprises: a main through-electrode which passes through a substrate; first and second signal transfer regions spaced apart from each other; a spare through-electrode which passes through the substrate; and a repairable region arranged between the first and second signal transfer regions, wherein the first and second signal transfer regions share the repairable region with each other such that when a defection occurs at the main through-electrode of the first and second signal transfer regions, the main through-electrode is replaced with the spare through-electrode in the repairable region. |
申请公布号 |
WO2015190670(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
WO2015KR01786 |
申请日期 |
2015.02.25 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS |
发明人 |
BAEG, SANG HYEON;CHUNG, SUNGSOO |
分类号 |
H01L21/60;H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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