发明名称 SEMICONDUCTOR APPARATUS HAVING REPAIRABLE THROUGH-ELECTRODE
摘要 A semiconductor apparatus having a repairable through-electrode is provided. The semiconductor apparatus having a repairable through-electrode comprises: a main through-electrode which passes through a substrate; first and second signal transfer regions spaced apart from each other; a spare through-electrode which passes through the substrate; and a repairable region arranged between the first and second signal transfer regions, wherein the first and second signal transfer regions share the repairable region with each other such that when a defection occurs at the main through-electrode of the first and second signal transfer regions, the main through-electrode is replaced with the spare through-electrode in the repairable region.
申请公布号 WO2015190670(A1) 申请公布日期 2015.12.17
申请号 WO2015KR01786 申请日期 2015.02.25
申请人 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS 发明人 BAEG, SANG HYEON;CHUNG, SUNGSOO
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
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