| 摘要 |
The invention concerns a C-MOS photoelectric cell with charge transfer, comprising an embedded photodiode (PPD) likely to be exposed to photons, formed by a doped area of a first type in a substrate of an opposite type, and means for transferring the charges generated by exposing the photodiode to photons to a floating diffusion (FD), and means for reading, on the floating diffusion, a voltage representative of the quantity of charges transferred. This cell is remarkable in that the depletion area of the photodiode junction under zero bias voltage extends essentially through the entire thickness of the doped area of a first type, such that the junction capacitance of said photodiode and the capacitive noise are minimised, and in that, during exposure to photons, the reading is carried out under a condition of equilibrium between the charges generated by photo-conversion and the charges lost by evaporation. The invention also proposes a matrix sensor formed from such cells with means forming a barrier to the diffusion of the charges evaporated from one cell to a neighbouring cell. |
