| 发明名称 |
DEVICES HAVING DIELECTRIC LAYERS WITH THIOSULFATE-CONTAINING POLYMERS |
| 摘要 |
A semiconductor device can be prepared with a gate dielectric layer that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photosensitizer component. |
| 申请公布号 |
US2015364687(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201414301370 |
申请日期 |
2014.06.11 |
| 申请人 |
Shukla Deepak;Donovan Kevin M. |
发明人 |
Shukla Deepak;Donovan Kevin M. |
| 分类号 |
H01L51/00 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising a gate dielectric layer that comprises:
(1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photosensitizer component. |
| 地址 |
Webster NY US |
