发明名称 Semiconductor Layer Sequence and Method for Producing a Semiconductor Layer Sequence
摘要 A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.
申请公布号 US2015364641(A1) 申请公布日期 2015.12.17
申请号 US201414763464 申请日期 2014.01.28
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 Bergbauer Werner;Drechsel Philipp;Stauß Peter;Rode Patrick
分类号 H01L33/00;H01L33/22;H01L31/0352;H01L33/32;H01L31/18;H01L31/0304;H01L33/24;H01L33/02 主分类号 H01L33/00
代理机构 代理人
主权项
地址 Regensburg DE