| 发明名称 |
LED ELEMENT |
| 摘要 |
Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x≦0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0≦y3≦0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less. |
| 申请公布号 |
US2015364640(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201414762387 |
申请日期 |
2014.01.23 |
| 申请人 |
USHIO DENKI KABUSHIKI KAISHA |
发明人 |
MIYOSHI Kohei;TSUKIHARA Masashi |
| 分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An LED element, comprising:
a first semiconductor layer constituted of an n-type nitride semiconductor; a current-diffusion layer formed on the first semiconductor layer; an active layer formed on the current-diffusion layer and constituted of a nitride semiconductor; and a second semiconductor layer formed on the active layer and constituted of a p-type nitride semiconductor, wherein the current-diffusion layer has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x≦0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0≦y3≦0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less. |
| 地址 |
Tokyo JP |
