INTEGRATED PHOTODETECTOR WAVEGUIDE STRUCTURE WITH ALIGNMENT TOLERANCE

摘要

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

主权项

1. A method, comprising:
forming an optical waveguide having a first lateral boundary and a second lateral boundary, bounded by pull down structures; forming a first encapsulating layer fully landed on the optical waveguide, with a window exposing a surface of the optical waveguide; forming photodetector material within the first lateral boundary and second lateral boundary of the optical waveguide, on the first encapsulating layer and in contact with the surface of the optical waveguide through the window; forming a second encapsulating layer over the photodetector material and within the first lateral boundary and the second lateral boundary of the optical waveguide; and crystallizing the photodetector material to form a photodetector fully landed on the optical waveguide.