发明名称 SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND SEMICONDUCTOR LIGHT-RECEIVING DEVICE ARRAY
摘要 A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located within the second area at different distances from the first point. The distance from the first point to the fourth point is larger than the distance from the first point to the third point. The first thickness is larger than the second thickness. The resin layer has a surface that monotonically changes from the first thickness to the second thickness.
申请公布号 US2015364618(A1) 申请公布日期 2015.12.17
申请号 US201514737310 申请日期 2015.06.11
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 IGUCHI Yasuhiro
分类号 H01L31/0232;H01L27/142;H01L31/0352;H01L31/0203;H01L31/0304 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A semiconductor light-receiving device comprising: a substrate having a principal surface including a first area and a second area surrounding the first area; a post disposed on the first area of the substrate, the post including a semiconductor mesa including an optical absorption layer; and a resin layer disposed on the second area of the substrate, the resin layer being in contact with a side surface of the post, wherein the resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located on the ray within the second area at different distances from the first point, the distance from the first point to the fourth point is larger than the distance from the first point to the third point, the first thickness at the third point is larger than the second thickness at the fourth point, and the resin layer has a surface that monotonically changes from the first thickness to the second thickness, in a section of the resin layer, the section being defined by a reference plane that passes the ray and extends along an axis normal to the principal surface of the substrate.
地址 Osaka JP