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发明名称
METHOD OF LIGHT INDUCED PLATING ON SEMICONDUCTORS
摘要
<p>반도체 위의 니켈에서의 광 유도 플레이팅 방법이 개시된다. 본 방법은 광을 제한된 양의 시간 동안 초기 세기로 가하고 이어서 플레이팅 기간의 잔여시간 동안 광의 세기를 감소시키는 것을 포함하여 반도체 상에 니켈을 증착시킨다.</p>
申请公布号
KR101578035(B1)
申请公布日期
2015.12.16
申请号
KR20090058539
申请日期
2009.06.29
申请人
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
发明人
함 게리;자크 데이비드 엘.
分类号
H01L21/208;H01L31/04
主分类号
H01L21/208
代理机构
代理人
主权项
地址
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