发明名称 |
Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
摘要 |
A semiconductor device which has a semiconductive single crystalline substrate having a plane surface, and an insulating film such as silicon oxide covering said plane surface, in which said plane surface lies parallel to a crystal plane other than a {111} plane, whereby the surface donor density is decreased. The surface donor density is minimized by subjecting said substrate to a heat treatment under application across said film of such a voltage as that which renders the electrode provided on said film negative polarity. |
申请公布号 |
DE1514082(A1) |
申请公布日期 |
1969.09.18 |
申请号 |
DE19651514082 |
申请日期 |
1965.02.12 |
申请人 |
KABUSHIKI KAISHA HITACHI SEISAKUSHO |
发明人 |
ONO,MINORU;MOMOI,TOSHIMITSU;KAWACHI,YOUJI |
分类号 |
H01L21/3105;H01L21/316;H01L21/326;H01L29/00;H01L29/04 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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