| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element and a wafer, which have less cracks.SOLUTION: According to an embodiment, a nitride semiconductor element comprises: a laminate including a laminated intermediate layer which includes a GaN intermediate layer having a flat principal surface, a high Al composition layer of AlGaN(0<x1≤1) provided on the GaN intermediate layer and a low Al composition layer of AlGaN(0<y1<1, y1<x1) provided on the high Al composition layer; and a functional layer provided on the laminate. An Al composition ratio of the low Al composition layer is not greater than a ratio of an absolute value of a difference between lattice spacing of a distortionless GaN and lattice spacing of the high Al composition layer to an absolute value of a difference between lattice spacing of the distortionless GaN and distortionless AlGaN(0<x1≤1). The low Al composition layer has compressive strain. Lattice spacing of the high Al composition layer is larger than lattice spacing of the distortionless AlGaN. |
