发明名称 Thin film transistor, thin film transistor array panel including the same and manufacturing method thereof
摘要 <p>A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region.</p>
申请公布号 EP2750197(A3) 申请公布日期 2015.12.16
申请号 EP20130199836 申请日期 2013.12.30
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHA, MYOUNG GEUN;LEE, YONG SU;KHANG, YOON HO;NA, HYUN JAE;YU, SE HWAN;LEE, JONG CHAN;SHIM, DONG HWAN
分类号 H01L29/66;H01L29/786 主分类号 H01L29/66
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