Thin film transistor, thin film transistor array panel including the same and manufacturing method thereof
摘要
<p>A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region.</p>
申请公布号
EP2750197(A3)
申请公布日期
2015.12.16
申请号
EP20130199836
申请日期
2013.12.30
申请人
SAMSUNG DISPLAY CO., LTD.
发明人
CHA, MYOUNG GEUN;LEE, YONG SU;KHANG, YOON HO;NA, HYUN JAE;YU, SE HWAN;LEE, JONG CHAN;SHIM, DONG HWAN