Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element

摘要

A method comprises a step for growing nitride semiconductor layers on a different material substrate; subsequently, a step for attaching a supporting substrate to the nitride semiconductor layers; and subsequently, a step for eliminating the different material substrate. A conductive layer is formed by a eutectic junction in the step for attaching. The step for eliminating the different material substrate is performed by laser irradiation, polishing, or chemical polishing. The method further comprises a step for breaking the nitride semiconductor layers into chips by etching an exposed surface of the nitride semiconductor layers after the step for eliminating the different material substrate. The method further comprises a step for forming an asperity portion on the exposed surface of the nitride semiconductor layers after the step for eliminating the different material substrate.