N型半导体层及N型薄膜电晶体的制备方法;METHOD OF MAKING N-TYPE SEMICONDUCTOR LAYER AND N-TYPE THIN FILM TRANSISTOR

摘要

一种N型半导体层的制备方法，包括以下步骤：提供一半导体奈米碳管层；通过原子层沈积方法在半导体层表面沈积一氧化铪层，该原子层沈积的方法具体包括：将半导体奈米碳管层置于原子层沈积系统反应腔的工作平台上，将工作平台加热至140-200摄氏度；向反应腔内持续通入一保护气体；在载气承载下分别以脉冲形式向反应腔内通入铪源与水蒸汽，在半导体奈米碳管层表面生成连续的氧化铪层，形成一N型半导体层，其中，含铪源的载气的一次脉冲时间为0.02s-0.03s，含水蒸汽的载气的一次脉冲时间为0.010s-0.015s。; depositing a hafnium oxide layer on a surface of the semiconductor layer by atomic layer deposition. The method of atomic layer deposition includes: placing the semiconductor carbon nanotube layer on a working platform of a atomic layer deposition system reactor; heating the working platform to attain 140°-200°; introducing a protective gas constantly; introducing hafnate and water vapor separately in pulse to the reactor by carrier gas, wherein a continuous hafnium oxide layer is formed on the surface of the semiconductor carbon nanotube layer. One pulse time of the carrier gas of hafnate is 0.02s-0.03s. One pulse time of the carrier gas of water vapor is 0.010s-0.015s.