| 摘要 |
A step of preparing a silicon carbide substrate (S11), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S12), and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas (S13) are provided. In the step of forming a first silicon carbide semiconductor layer (S12) and the step of forming a second silicon carbide semiconductor layer (S13), ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms. |
