| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for obtaining MISFET having desired property by adjusting the isolation width of an element isolation section. SOLUTION: The isolation width La and isolation with La' of an element isolation part 4 are made relatively narrow so that the influence of a stress to be imposed on the channel region of a second MISFETQ<SB>2</SB>can be increased. The change of a threshold voltage is made relatively large, and the isolation width Lb and isolation width Lb' of the element isolation part 4 are made relatively wide so that the influence of a stress to be imposed on the channel region of the fourth MISFETQ<SB>4</SB>can be reduced, and the change of the threshold voltage is made relatively small. COPYRIGHT: (C)2009,JPO&INPIT
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