| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory (RAM) with a reference cell more stably magnetized. SOLUTION: The magnetic RAM includes a substrate consisting of a semiconductor. A first magnetoresistive element MRa is provided above the surface of the substrate, has two stationary states having different resistance values depending on a magnetoresistive effect, and has a first length in which a shape projected on the surface of the substrate follows a first direction and a second length eqaul to or longer than the first length in which it follows a second direction. A proportion of the second length to the first length is a first value. A second magnetoresistive effect element MRb is provided above the surface of the substrate, is used to decide the resistance value of the first magnetoresistive effect element, has two stationary states having different values depending on the magnetoresistive effect, and has a third length in which a shape projected to the surface of the substrate follows a third direction and a fourth length equal to or longer than the third length in which it follows a fourth direction. A proportion of the fourth length to the third length is larger than the first value. COPYRIGHT: (C)2009,JPO&INPIT
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