| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a wafer support pedestal facing a ceiling, a cylindrical sidewall, and the ceiling. <P>SOLUTION: The method includes providing a gas distributing ring 200 with plural gas injection orifices 120 on a periphery of the wafer support pedestal 108, the orifices 120 facing radially outwardly from the wafer support pedestal 108. Silicon-containing gas is introduced through the gas distributing orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes a pair of conduit ports 114 in the ceiling adjacent the sidewall at opposite sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. <P>COPYRIGHT: (C)2009,JPO&INPIT |
