| 摘要 |
A contact plug of a semiconductor device and method of formation thereof are provided to simplify processing stages by performing an ion injection process and thermal process at the same time in a same chamber so that the process time and cost are cut down. An insulating layer(202) in which a contact hole(205) is formed on a semiconductor substrate(200) is formed. While a contact plug is formed within the contact hole, an ion injection process is performed. A junction(200a) is formed in the semiconductor substrate exposed through the contact hole before the contact plug is formed. The contact plug is formed of the first conductive film and the second conductive film having different concentration of impurity. The first conductive film and the second conductive film are formed of a polysilicon layer.
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