| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device high in reliability and yield, and to provide a method of manufacturing it. SOLUTION: The semiconductor device includes: a first gate electrode 19 formed on a semiconductor substrate 10; a first diffusion layer 20 formed in the semiconductor substrate under one side face of the first gate electrode; a second diffusion layer 18 formed in the semiconductor substrate under the other side face of the first gate electrode; a second gate electrode 13 whose side face is formed on the second diffusion layer; a first insulating film 25, which fills between the first/second gate electrodes, is formed thinner than a thickness of filling between the first/second gate electrodes on the first diffusion layer, and is not mainly made of nitrogen; a second insulating film 26 formed on the first insulating film; an interlayer insulating film 27 formed on the second insulating film 26 and having a main component different from that of the second insulating film; and a contact electrode 23 connected to the first diffusion layer and formed in the first insulating film, second insulating film, and interlayer insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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