| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can remarkably reduce on-resistance. SOLUTION: The semiconductor device 20 is provided with an epitaxial layer 2 which is formed on the upper surface of an n<SP>+</SP>-type silicon substrate 1 and has an n-type well region 2a and p<SP>-</SP>-type area 2b, a trench 3 formed in the n-type well region 2a, and an embedded electrode 5 which is formed inside the trench 3 with a silicon oxide film 4 interposed. A region among adjacent trenches 3 becomes a current passage 12, and the current passage 12 is blocked by covering each area between adjacent trenches 3 with a depletion layer 13 formed at the periphery of the trench 3, and the current passage 12 is opened by clearing away a part of the depletion layer 13 formed at the periphery of the trench 3. A junction section of the n<SP>+</SP>-type silicon layer 1 and the p<SP>-</SP>-type diffusion layer 2b is formed as a zener diode. COPYRIGHT: (C)2009,JPO&INPIT
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