| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a multilayer interconnection structure having an interlayer dielectric containing a methyl group and has improved reliability. SOLUTION: An insulation film 3 having low permittivity is formed, an open hole 4 reaching a wiring layer 2 is formed on the insulation film 3, plasma treatment using gas containing hydrogen or ammonium is performed, plasma treatment using gas containing fluorocarbon is performed, and contact failure and void are suppressed, thus preventing a resistance increase, disconnection, and the like and providing the method of manufacturing the semiconductor device with greatly improved reliability. COPYRIGHT: (C)2009,JPO&INPIT
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