发明名称 |
Phase Change Memory Devices and Methods of Fabricating the Same |
摘要 |
Phase change memory devices are provided including a selection element electrically connected to a phase change material pattern. The selection element includes a metallic conductor and a semiconductor that are in contact with each other. A depletion region in contact with a metallic pattern is generated in the semiconductor in an equilibrium state. The depletion region includes a high barrier region having an electric potential barrier higher than an interface electric potential barrier and a low barrier region having an electric potential barrier lower than the interface electric potential barrier. Related methods are also provided.
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申请公布号 |
US2009008622(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080167504 |
申请日期 |
2008.07.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM NAM-BIN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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