SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHODS,申请号EP20030721079-传众专利搜索

发明名称	SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHODS
摘要	<p>The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance characteristics such as lower electrical power consumption, and a method of manufacturing a semiconductor device including a method of manufacturing the semiconductor substrate thereof in a process, as well as to a semiconductor substrate manufactured by the method of manufacturing the same and a semiconductor device manufactured using the semiconductor substrate. <IMAGE></p>
申请公布号	EP1513198(A4)	申请公布日期	2010.02.24
申请号	EP20030721079	申请日期	2003.05.08
申请人	NEC CORPORATION	发明人	OGURA, ATSUSHI
分类号	H01L21/76;H01L21/02;H01L21/265;H01L21/336;H01L21/762;H01L21/764;H01L21/8242;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/12	主分类号	H01L21/76
代理机构		代理人
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