发明名称 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE
摘要 PURPOSE: A high-temperature resistant bonding composition is provided to utilize an adhesive layer within a minute small structure, to ensure a low weight reduction rate eventeven though an adhered material is processed in at a high temperature, and to maintain a strong adhesive property against thermal stress. CONSTITUTION: A high-temperature resistant bonding composition comprises a silicon base polymer as a thermosetting binder, wherein the silicon base polymer is obtained from the dehydrolytic condensation of a condensate precursor or a mixture thereof. The condensate precursor comprising comprises a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an optionally cyclic structure-containing a straight or branched, or cyclic aliphatic hydrocarbon group of 1 to 10 carbon atoms, a heterocycle-containing group of 4 or 8 carbon atoms, or an aromatic ring-containing hydrocarbon group of 6 to 12 carbon atoms. The silane compound having has at least three hydroxyl groups and/or hydrolyzable groups, and those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon group, the heterocycle-containing group or the aromatic ring-containing hydrocarbon group are present in a proportion of at least 90 mol% relative to all silicon atoms in the silicon base polymer.
申请公布号 KR20100021353(A) 申请公布日期 2010.02.24
申请号 KR20090067155 申请日期 2009.07.23
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HAMADA YOSHITAKA;YAGIHASHI FUJIO;ASANO TAKESHI
分类号 C09J183/02;C09J5/06 主分类号 C09J183/02
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