Method for monolithic integration of a pseudomorphic integrated telephone and data network and a transistor made from III-V materials

摘要

The semiconductor structure having superimposed layers comprises a support layer (3) i.e. a substrate (1) composed of a semiconductor III-V material with a first mesh parameter, a negatively (N)-doped layer (5) composed of a semiconductor III-V material with a second mesh parameter, a positively (P)-doped layer (6) composed of a semiconductor III-V material, and a gradual layer (4) placed between the support layer and the N-doped layer and composed of a semiconductor III-V material whose stoichiometric composition varies gradually in function of the thickness of the gradual layer. The semiconductor structure having superimposed layers comprises a support layer (3) i.e. a substrate (1) composed of a semiconductor III-V material with a first mesh parameter, a negatively (N)-doped layer (5) composed of a semiconductor III-V material with a second mesh parameter, a positively (P)-doped layer (6) composed of a semiconductor III-V material, and a gradual layer (4) placed between the support layer and the N-doped layer and composed of a semiconductor III-V material whose stoichiometric composition varies gradually in function of the thickness of the gradual layer so as to produce a mesh parameter, which is equal to first and second parameters. The P-doped layer forms a type-II heterojunction. The structure further includes an upper semiconductor layer.