| 摘要 |
A method, and corresponding apparatus, of imaging sub-surface features at a plurality of locations on a sample includes coupling an ultrasonic wave into a sample at a first lateral position. The method then measures the amplitude and phase of ultrasonic energy near the sample with a tip of an atomic force microscope. Next, the method couples an ultrasonic wave into a sample at a second lateral position and the measuring step is repeated for the second lateral position. Overall, the present system and methods achieve high resolution sub-surface mapping of a wide range of samples, including silicon wafers. It is notable that when imaging wafers, backside contamination is minimized. |
