| 摘要 |
On a semiconductor substrate (30) having a gate electrode (32) and an LDD layer (33) formed thereon, an SiN film (34) to be a silicide block is formed. An opening (34a) communicating with the LDD layer (33) is provided for the SiN film (34). Impurities are introduced into the LDD layer (33) through the opening (34a) to form a source/drain layer (33a), and the surface thereof is silicided to form a silicide film (36a). Next, an interlayer insulation film (37) of SiO 2 is formed and then etched under a condition of an etching rate of SiO 2 higher than that of SiN to form a contact hole (37h) reaching the LDD layer (33) from the upper surface of the interlayer insulation film (37) via the opening (34a). |
