| 摘要 |
PURPOSE: A method for forming an element isolation film is provided to improve an aspect ratio by increasing the width of a trench entrance using a first insulating film with superior mobility. CONSTITUTION: A gate insulating layer, a conductive film(106) and a hard mask film are successively formed in the active area of a semiconductor substrate(102). A trench is formed in the element isolation region. A first insulating layer(116) is formed in the trench. A first planarization process is executed for the first insulating layer and the height of the first insulating layer is lowered. The trench entrance width broadens by removing the hard mask film. A second insulating layer(118) is formed on the first insulating layer formed in the trench. An element isolation film is formed by executing a second planarization process for the second insulating layer.
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