| 摘要 |
<p>An apparatus for programming a threshold-voltage of a non-volatile memory cell includes a reference voltage generator means applying a predetermined voltage to a word line of a reference memory cell having the same electric characteristics as the memory cell desired to be programmed and generating a reference voltage by thusly generated current; a comparator means comparing the reference voltage with a bit line voltage according to the cell current flowing at the memory cell to be programmed; a word line voltage generator means being controlled by a level count value, selecting word line voltages corresponding to the plurality of threshold voltages of the memory cell to be programmed and outputting it; a word line driving means applying the word line voltages selected by the word line voltage generator means to the word line selected by the word line enable signal; a level data selector means encoding a state data and selectively outputting data corresponding to each level by the level select signal; a latch means being controlled by the output signal from the comparator, latching the data outputted from the level data selector means; a bit line voltage controller means selectively discontinuing programming according to the level of the data latched by the latch means; and a bit line selector means selecting a specific bit line by a bit line enable signal</p> |
