| 摘要 |
PURPOSE: A reflective type liquid crystal display device and a fabricating method thereof are provided to minimize the number of photolithographic process. CONSTITUTION: A thin film transistor(102) is formed on a domain in which a gate line and a data line of each pixel of a substrate(101) cross. The thin film transistor includes a gate electrode(102a), a gate insulating layer(102b), an active layer(102c), a source electrode(102d) and a drain electrode(102e). On the first passivation layer(103), the first contact hole(103a) exposing a partial domain of the drain electrode is prepared. On a reflective layer(104), the second contact hole(104a) corresponding to the first contact hole is prepared. On the second passivation layer(105), the third contact hole(105a) corresponding to the first/second contact holes is prepared. A pixel electrode(106) is connected with the drain electrode of the thin film transistor through the first ~ third contact holes. |
